EPR study of single silicon vacancy-related defects in 4H- and 6H-SiC

Mizuochi, Norikazu*; Isoya, Junichi*; Yamasaki, Satoshi*; Takizawa, Haruki; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi

Materials Science Forum, 389-393, p.497 - 500, 2002/00

https://doi.org/10.4028/www.scientific.net/MSF.389-393.497

The spin triplet (S=1) single silicon vacancy relared defects in electron irradiated (3MeV 410 e/cm, room temperature) n-type 4H- and p-type 6H-SiC were studied by electron paramagnetic resonance (EPR) spectroscopy. By laser irradiation, the hyperfine couplings (HFC) with nearest-neighbor (NN) atoms of T were observed. As a result of detailed analysis, T was unambiguously assigned to be the single silicon vacancy.